High temperature ultrasonic sensor for fission gas characterization in MTR harsh environment

CNRS-University Montpellier 2, Institute of Electronics and Systems, UMR 5214, F-34095, Montpellier, France
Reactor Studies Department, French Nuclear Energy and Alternative Energies Commission, CEA Cadarache, F-13108 Saint Paul-Lez-Durance, France

email: oleksandr.gatsa@ies.univ-montp2.fr
email: damien.fourmentel@cea.fr

Published online: 10 January 2018

Abstract

In the contemporary world, the measurements in hostile environment is one of the predominant necessity for automotive, aerospace, metallurgy and nuclear plant. The measurement of different parameters in experimental reactors is an important point in nuclear power strategy. In the near past, IES (Institut d’Électronique et des Systèmes) on collaboration with CEA (Commissariat à l’Energie Atomique et aux Energies Alternatives) have developed the first ultrasonic sensor for the application of gas quantity determination that has been tested in a Materials Testing Reactor (MTR). Modern requirements state to labor with the materials that possess stability on its parameters around 350°C in operation temperature. Previous work on PZT components elaboration by screen printing method established the new basis in thick film fabrication and characterization in our laboratory. Our trials on Bismuth Titanate ceramics showed the difficulties related to high electrical conductivity of fabricated samples that postponed further research on this material. Among piezoceramics, the requirements on finding an alternative solution on ceramics that might be easily polarized and fabricated by screen printing approach were resolved by the fabrication of thick film from Sodium Bismuth Titanate (NBT) piezoelectric powder. This material exhibits high Curie temperature, relatively good piezoelectric and coupling coefficients, and it stands to be a good solution for the anticipated application.

In this paper, we present NBT thick film fabrication by screen printing, characterization of piezoelectric, dielectric properties and material parameters studies in dependence of temperature. Relatively high resistivity in the range of 1.10¹³ Ohm.cm for fabricated thick film is explained by Aurivillius structure in which a-and b-layers form perovskite structure between oxides of c-layer. Main results of this study are presented and discussed in terms of feasibility for an application to a new sensor device operating at high temperature level (400°). Piezoelectric parameters enhancement and loss reduction at elevated temperatures are envisaged to be optimized. Further sensor development and test in MTR are expected to be realized in the near future.