EPJ Web Conf.
Volume 253, 2021ANIMMA 2021 – Advancements in Nuclear Instrumentation Measurement Methods and their Applications
|Nombre de pages||7|
|Section||Current Trends in Development of Radiation Detectors|
|Publié en ligne||19 novembre 2021|
Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments
Ruddy Consulting, USA
2 Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, FRANCE
3 CEA Cadarache, FRANCE
Published online: 19 November 2021
Silicon carbide (SiC) semiconductor is an ideal material for solid-state nuclear radiation detectors to be used in high-temperature, high-radiation environments. Such harsh environments are typically encountered in nuclear reactor measurement locations as well as high-level radioactive waste and/or “hot” dismantlingdecommissioning operations. In the present fleet of commercial nuclear reactors, temperatures in excess of 300 °C are often encountered, and temperatures up to 800 °C are anticipated in advanced reactor designs. The wide bandgap for SiC (3.27 eV) compared to more widely used semiconductors such as silicon (1.12 eV at room temperature) has allowed low-noise measurements to be carried out at temperatures up to 700 °C. The concentration of thermally induced charge carriers in SiC at 700 °C is about four orders of magnitude less than that of silicon at room temperature. Furthermore, SiC radiation detectors have been demonstrated to be much more resistant to the effects of radiation-induced damage than more conventional semiconductors such as silicon, germanium, or cadmium zinc telluride (CZT), and have been demonstrated to be operational after extremely high gamma-ray, neutron, and charged-particle doses. The purpose of the present review is to provide an updated state of the art for SiC neutron detectors and to explore their applications in harsh high-temperature, high-radiation nuclear reactor applications. Conclusions related to the current state-of-the-art of SiC neutron detectors will be presented, and specific ideal applications will be discussed.
Key words: Neutron detectors / silicon carbide / SiC / semiconductor / radiation damage
© The Authors, published by EDP Sciences, 2021
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.